G3S12010D
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$12.02
Available to order
Reference Price (USD)
1+
$12.02000
500+
$11.8998
1000+
$11.7796
1500+
$11.6594
2000+
$11.5392
2500+
$11.419
Exquisite packaging
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Maximize efficiency with Global Power Technology-GPT's G3S12010D Single Rectifier Diodes, the go-to choice for professionals seeking reliable power rectification. Suitable for high-frequency applications, these diodes provide fast recovery times and low conduction losses. Commonly used in switch-mode power supplies, welding equipment, and battery chargers, they are built to withstand harsh environments. Features include high surge current ratings and robust packaging. Don't miss out request a sample or quote today!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 765pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
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