G3S12010P
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$14.88
Available to order
Reference Price (USD)
1+
$14.88000
500+
$14.7312
1000+
$14.5824
1500+
$14.4336
2000+
$14.2848
2500+
$14.136
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Streamline your power solutions with G3S12010P Single Rectifier Diodes from Global Power Technology-GPT, a trusted name in discrete semiconductors. These diodes are perfect for high-efficiency rectification in consumer and industrial electronics. Features such as low reverse recovery time and high surge capability make them a preferred choice. Applications include LED lighting, HVAC systems, and more. Global Power Technology-GPT ensures top-notch performance and reliability. Inquire today to learn how we can meet your needs!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 37A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 765pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Diotec Semiconductor
GL34JR13
Diodes Incorporated
1N4148WT-7
Micro Commercial Co
1N5817-TP
SMC Diode Solutions
MBR140HW
Vishay General Semiconductor - Diodes Division
FESB8GTHE3_A/P
Comchip Technology
CDBQR70
STMicroelectronics
STTH10R04D
Micro Commercial Co
ER1G-LTP
Microchip Technology
CDLL1A30
Diodes Incorporated