G3S12020B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
$23.61
Available to order
Reference Price (USD)
1+
$23.61000
500+
$23.3739
1000+
$23.1378
1500+
$22.9017
2000+
$22.6656
2500+
$22.4295
Exquisite packaging
Discount
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Optimize your electronic systems with the G3S12020B from Global Power Technology-GPT, a leading product in the Diodes - Rectifiers - Arrays category of Discrete Semiconductor Products. These diodes provide exceptional rectification and array performance, backed by advanced technology and rigorous testing. The G3S12020B is known for its high efficiency, low power dissipation, and long service life. Global Power Technology-GPT guarantees quality and reliability in every component. Contact us today to learn more and place your order!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 37A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
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