Shopping cart

Subtotal: $0.00

G4S06506HT

Global Power Technology-GPT
G4S06506HT Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
$4.17
Available to order
Reference Price (USD)
1+
$4.17000
500+
$4.1283
1000+
$4.0866
1500+
$4.0449
2000+
$4.0032
2500+
$3.9615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 9.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Taiwan Semiconductor Corporation

UG06AH

PN Junction Semiconductor

P3D06004G2

GeneSiC Semiconductor

MBRH20030R

Vishay General Semiconductor - Diodes Division

BYV98-150-TR

Taiwan Semiconductor Corporation

SRT14 R0G

Microchip Technology

JANTX1N5190

Vishay General Semiconductor - Diodes Division

SL43-M3/9AT

Vishay General Semiconductor - Diodes Division

V10PM12HM3_A/H

Vishay General Semiconductor - Diodes Division

SS1H10HM3_B/H

Vishay General Semiconductor - Diodes Division

CSA2J-E3/I

Top