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G4S06510HT

Global Power Technology-GPT
G4S06510HT Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
$5.19
Available to order
Reference Price (USD)
1+
$5.19000
500+
$5.1381
1000+
$5.0862
1500+
$5.0343
2000+
$4.9824
2500+
$4.9305
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F
  • Operating Temperature - Junction: -55°C ~ 175°C

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