G4S12040BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
$56.85
Available to order
Reference Price (USD)
1+
$56.85000
500+
$56.2815
1000+
$55.713
1500+
$55.1445
2000+
$54.576
2500+
$54.0075
Exquisite packaging
Discount
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Experience unparalleled performance with the G4S12040BM from Global Power Technology-GPT, a key player in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. These diodes are engineered for precision and durability, offering features such as fast recovery time and high current density. The G4S12040BM is perfect for applications requiring reliable rectification and array configurations. Global Power Technology-GPT ensures every product meets stringent quality controls. Contact us today to request a sample or to discuss bulk purchase options!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 64.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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