G5S06505DT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
$4.96
Available to order
Reference Price (USD)
1+
$4.96000
500+
$4.9104
1000+
$4.8608
1500+
$4.8112
2000+
$4.7616
2500+
$4.712
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Global Power Technology-GPT's G5S06505DT Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Global Power Technology-GPT for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 24A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
RGF1D-E3/67A
Vishay General Semiconductor - Diodes Division
1N5822-E3/54
Panjit International Inc.
S1K_R1_00001
NTE Electronics, Inc
NTE5842
GeneSiC Semiconductor
S40Q
Vishay General Semiconductor - Diodes Division
S2G-E3/5BT
Taiwan Semiconductor Corporation
SS12L
STMicroelectronics
STTH1R06
Taiwan Semiconductor Corporation
HS1AL RVG
SMC Diode Solutions