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G5S06510DT

Global Power Technology-GPT
G5S06510DT Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
$6.12
Available to order
Reference Price (USD)
1+
$6.12000
500+
$6.0588
1000+
$5.9976
1500+
$5.9364
2000+
$5.8752
2500+
$5.814
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 38A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 645pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
  • Operating Temperature - Junction: -55°C ~ 175°C

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