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G5S12002C

Global Power Technology-GPT
G5S12002C Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
$3.03
Available to order
Reference Price (USD)
1+
$3.03000
500+
$2.9997
1000+
$2.9694
1500+
$2.9391
2000+
$2.9088
2500+
$2.8785
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 8.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 170pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 175°C

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