G5S12008C
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
$8.61
Available to order
Reference Price (USD)
1+
$8.61000
500+
$8.5239
1000+
$8.4378
1500+
$8.3517
2000+
$8.2656
2500+
$8.1795
Exquisite packaging
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Achieve superior power conversion with G5S12008C Single Rectifier Diodes from Global Power Technology-GPT. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Global Power Technology-GPT's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 28.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
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