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G5S12010A

Global Power Technology-GPT
G5S12010A Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$13.49
Available to order
Reference Price (USD)
1+
$13.49000
500+
$13.3551
1000+
$13.2202
1500+
$13.0853
2000+
$12.9504
2500+
$12.8155
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 37A (DC)
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C

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