G5S12016BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 16A 3-P
$15.25
Available to order
Reference Price (USD)
1+
$15.25000
500+
$15.0975
1000+
$14.945
1500+
$14.7925
2000+
$14.64
2500+
$14.4875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the G5S12016BM by Global Power Technology-GPT, a standout in the Diodes - Rectifiers - Arrays field under Discrete Semiconductor Products. These diodes are built to provide reliable rectification and array functionality, ensuring optimal performance in various settings. The G5S12016BM boasts low leakage current and high reverse voltage, making it a versatile component for multiple applications. Global Power Technology-GPT's commitment to excellence guarantees products you can trust. Contact us now for pricing and availability!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 27.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
Sanken
FMW-4306
Diodes Incorporated
SDT30A120CTFP
Phoenix Contact
2954798
Vishay General Semiconductor - Diodes Division
SS10P3CLHM3_A/I
Vishay General Semiconductor - Diodes Division
MMBD7000-E3-08
Comchip Technology
BAV99-HF
SMC Diode Solutions
400CNQ040
Wolfspeed, Inc.
C4D40120D
onsemi
MMBD1203
SMC Diode Solutions