G5S12030BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 30A 3-P
$33.35
Available to order
Reference Price (USD)
1+
$33.35000
500+
$33.0165
1000+
$32.683
1500+
$32.3495
2000+
$32.016
2500+
$31.6825
Exquisite packaging
Discount
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Enhance your circuit designs with the G5S12030BM by Global Power Technology-GPT, a standout in the Diodes - Rectifiers - Arrays field under Discrete Semiconductor Products. These diodes are built to provide reliable rectification and array functionality, ensuring optimal performance in various settings. The G5S12030BM boasts low leakage current and high reverse voltage, making it a versatile component for multiple applications. Global Power Technology-GPT's commitment to excellence guarantees products you can trust. Contact us now for pricing and availability!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 55A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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