GA10JT12-263
GeneSiC Semiconductor
GeneSiC Semiconductor
TRANS SJT 1200V 25A
$20.74
Available to order
Reference Price (USD)
1+
$20.15000
10+
$18.31900
50+
$16.94520
100+
$15.57130
250+
$14.19740
500+
$13.28142
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
GA10JT12-263 by GeneSiC Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, GA10JT12-263 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 120mOhm @ 10A
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: -
Related Products
IXYS
IXTQ32N65X
Infineon Technologies
IPP65R150CFDAAKSA1
NXP USA Inc.
PSMN8R0-30YL,115
Vishay Siliconix
IRFR420ATRPBF
Infineon Technologies
IRF7416TRPBF
Rohm Semiconductor
SCT3040KW7TL
onsemi
NTHD3133PFT1G
STMicroelectronics
STP20NF20
IXYS
IXFH10N100
Nexperia USA Inc.