GB10SLT12-220
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 1200V 10A TO220AC
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Optimize your circuitry with GeneSiC Semiconductor's GB10SLT12-220 Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. GeneSiC Semiconductor guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Obsolete
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
- Capacitance @ Vr, F: 520pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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