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GC10MPS12-252

GeneSiC Semiconductor
GC10MPS12-252 Preview
GeneSiC Semiconductor
SIC DIODE 1200V 10A TO-252-2
$3.92
Available to order
Reference Price (USD)
2,500+
$5.46975
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 50A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: 660pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C

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