GC11N65F
Goford Semiconductor
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
$1.95
Available to order
Reference Price (USD)
1+
$1.95000
500+
$1.9305
1000+
$1.911
1500+
$1.8915
2000+
$1.872
2500+
$1.8525
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with GC11N65F, a reliable Transistors - FETs, MOSFETs - Single by Goford Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, GC11N65F meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 31.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
Related Products
Renesas Electronics America Inc
2SK3634-AZ
Vishay Siliconix
SUM90N03-2M2P-E3
Toshiba Semiconductor and Storage
SSM3J356R,LF
Fairchild Semiconductor
HUF75945G3
STMicroelectronics
STWA50N65DM2AG
Fairchild Semiconductor
HUF75639S3_NL
onsemi
ATP404-TL-H
Vishay Siliconix
SQD40061EL-T4_GE3
Infineon Technologies
IRF6775MTRPBF
Vishay Siliconix