GE12047BCA3
General Electric
General Electric
1200V 475A SiC Dual Module
$1,925.00
Available to order
Reference Price (USD)
1+
$1925.00000
500+
$1905.75
1000+
$1886.5
1500+
$1867.25
2000+
$1848
2500+
$1828.75
Exquisite packaging
Discount
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Discover high-performance GE12047BCA3 from General Electric, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let General Electric s GE12047BCA3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 Independent
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 475A
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
- Vgs(th) (Max) @ Id: 4.5V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
- Power - Max: 1250W
- Operating Temperature: -55°C ~ 150°C (Tc)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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