GPIHV30DFN
GaNPower
GaNPower
GANFET N-CH 1200V 30A DFN8X8
$22.00
Available to order
Reference Price (USD)
1+
$22.00000
500+
$21.78
1000+
$21.56
1500+
$21.34
2000+
$21.12
2500+
$20.9
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of GPIHV30DFN, a premium Transistors - FETs, MOSFETs - Single from GaNPower. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, GPIHV30DFN is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Vishay Siliconix
IRFBC40APBF-BE3
Nexperia USA Inc.
BSH103BKR
Infineon Technologies
IRLS3036TRLPBF
onsemi
FDB1D7N10CL7
Toshiba Semiconductor and Storage
SSM3K341TU,LF
Motorola
MTB4N40ET4
Infineon Technologies
BSO040N03MSGXUMA1
STMicroelectronics
STP18N60DM2
Infineon Technologies
IPP60R280CFD7XKSA1
STMicroelectronics