GT30J121(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 600V 30A 170W TO3PN
$2.91
Available to order
Reference Price (USD)
1+
$2.90960
500+
$2.880504
1000+
$2.851408
1500+
$2.822312
2000+
$2.793216
2500+
$2.76412
Exquisite packaging
Discount
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The GT30J121(Q) Single IGBT by Toshiba Semiconductor and Storage sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Toshiba Semiconductor and Storage for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
- Power - Max: 170 W
- Switching Energy: 1mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 90ns/300ns
- Test Condition: 300V, 30A, 24Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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