H5N2305P-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$6.73
Available to order
Reference Price (USD)
1+
$6.73000
500+
$6.6627
1000+
$6.5954
1500+
$6.5281
2000+
$6.4608
2500+
$6.3935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronic projects with H5N2305P-E from Renesas Electronics America Inc, a top-tier supplier of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single offer fast response times and high durability, making them ideal for high-frequency applications. Whether for telecommunications or computing, H5N2305P-E delivers. Contact us now to explore how Renesas Electronics America Inc can meet your needs.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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