H5N2901FN-E
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$2.44
Available to order
Reference Price (USD)
1+
$2.44000
500+
$2.4156
1000+
$2.3912
1500+
$2.3668
2000+
$2.3424
2500+
$2.318
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover H5N2901FN-E, a versatile Transistors - FETs, MOSFETs - Single solution from Renesas Electronics America Inc, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Renesas Electronics America Inc
RJK0657DPA-00#J5A
Toshiba Semiconductor and Storage
TK100S04N1L,LXHQ
Toshiba Semiconductor and Storage
SSM3K335R,LF
Microchip Technology
APT7M120B
Microchip Technology
APT20M22LVFRG
Infineon Technologies
IPA90R340C3XKSA2
Vishay Siliconix
SUD15N15-95-BE3
STMicroelectronics
STL110NS3LLH7
Wolfspeed, Inc.
C3M0030090K
Renesas Electronics America Inc