HBDM60V600W-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 65V/60V SOT363
$0.00
Available to order
Reference Price (USD)
3,000+
$0.11595
6,000+
$0.10965
15,000+
$0.10335
30,000+
$0.09600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your circuit performance with Diodes Incorporated's HBDM60V600W-7 BJT Arrays, offering exceptional reliability and versatility. These arrays provide high voltage tolerance, precise current control, and compact packaging, suitable for portable electronics and embedded systems. Frequently used in audio processing, sensor interfaces, and automation controls. Get started today send us your requirements and we ll provide the best solution for your project!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA, 600mA
- Voltage - Collector Emitter Breakdown (Max): 65V, 60V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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