HGT1S12N60B3S
Harris Corporation
Harris Corporation
27A, 600V, UFS N-CHANNEL IGBT
$1.30
Available to order
Reference Price (USD)
1+
$1.30000
500+
$1.287
1000+
$1.274
1500+
$1.261
2000+
$1.248
2500+
$1.235
Exquisite packaging
Discount
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Choose HGT1S12N60B3S Single IGBTs by Harris Corporation for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Harris Corporation's reputation for quality makes HGT1S12N60B3S a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 27 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 304µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 68 nC
- Td (on/off) @ 25°C: 26ns/150ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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