HGT1S12N60C3R
Harris Corporation
Harris Corporation
24A, 600V N-CHANNEL IGBT
$1.21
Available to order
Reference Price (USD)
1+
$1.21000
500+
$1.1979
1000+
$1.1858
1500+
$1.1737
2000+
$1.1616
2500+
$1.1495
Exquisite packaging
Discount
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Discover high-performance HGT1S12N60C3R Single IGBTs from Harris Corporation, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, HGT1S12N60C3R ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 400µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 71 nC
- Td (on/off) @ 25°C: 37ns/120ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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