HGT1S2N120CN
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$1.87
Available to order
Reference Price (USD)
1+
$1.87000
500+
$1.8513
1000+
$1.8326
1500+
$1.8139
2000+
$1.7952
2500+
$1.7765
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGT1S2N120CN Single IGBT by Fairchild Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Fairchild Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
- Power - Max: 104 W
- Switching Energy: 96µJ (on), 355µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 25ns/205ns
- Test Condition: 960V, 2.6A, 51Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
Related Products
Alpha & Omega Semiconductor Inc.
AOT5B60D
IXYS
IXYK200N65B3
Infineon Technologies
IKD03N60RFATMA1
Renesas Electronics America Inc
RJP6085DPK-00#T0
Infineon Technologies
SGW30N60FKSA1
Microchip Technology
APT30GP60BDQ1G
STMicroelectronics
STGD3NB60SDT4
Alpha & Omega Semiconductor Inc.
AOKS30B60D1
Fairchild Semiconductor
SGP5N60RUFTU
Infineon Technologies