HN1A01FE-Y,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A ES6
$0.06
Available to order
Reference Price (USD)
4,000+
$0.06300
8,000+
$0.05670
12,000+
$0.05040
28,000+
$0.04725
100,000+
$0.04200
Exquisite packaging
Discount
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Upgrade your electronic designs with the HN1A01FE-Y,LF BJT Arrays by Toshiba Semiconductor and Storage, offering unmatched durability and precision. Key features include high gain, low noise, and thermal stability, ensuring optimal performance in demanding environments. Widely used in audio amplifiers, motor control systems, and power management circuits. Interested in bulk orders or custom solutions? Submit your inquiry now and our team will respond promptly!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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