HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ES6
$0.31
Available to order
Reference Price (USD)
4,000+
$0.05313
8,000+
$0.04620
12,000+
$0.03927
28,000+
$0.03696
100,000+
$0.03080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HN1B04FE-GR,LF Bipolar Junction Transistor Arrays from Toshiba Semiconductor and Storage are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
Related Products
Linear Integrated Systems, Inc.
IT132 SOT-23 6L
Nexperia USA Inc.
BC856SF
Linear Integrated Systems, Inc.
IT132 TO-71 6L
Microchip Technology
2N4854
Nexperia USA Inc.
PBSS4160PANSX
Analog Devices Inc.
SSM2212CPZ-R7
Nexperia USA Inc.
BC847BPN,135
Diodes Incorporated
ZHB6718TA
Sanyo
CPH5516-TL-E
Nexperia USA Inc.