HN1B04FE-Y,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ES6
$0.31
Available to order
Reference Price (USD)
4,000+
$0.05313
8,000+
$0.04620
12,000+
$0.03927
28,000+
$0.03696
100,000+
$0.03080
Exquisite packaging
Discount
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The HN1B04FE-Y,LF Bipolar Transistor Arrays from Toshiba Semiconductor and Storage deliver superior performance for complex circuit designs. Featuring matched pairs, high-frequency response, and robust construction, these arrays are suited for analog and digital applications. Commonly applied in medical equipment, automotive systems, and LED drivers. Ready to enhance your project? Request a sample or get a competitive price by sending us your inquiry today!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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