HN1C01F-GR(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 50V 0.15A SM6
$0.32
Available to order
Reference Price (USD)
1+
$0.41000
10+
$0.29200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve peak performance with Toshiba Semiconductor and Storage's HN1C01F-GR(TE85L,F BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 800MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
Related Products
onsemi
FMB3946
Diodes Incorporated
BC847BS-7-F
Rohm Semiconductor
UMB10NFHATN
onsemi
FMBA06
Panasonic Electronic Components
XP0643500L
Linear Integrated Systems, Inc.
IT130A DIE
Nexperia USA Inc.
PHPT610035NKX
Diodes Incorporated
MMDT5401-7-F
onsemi
SBC847BDW1T1G
Rohm Semiconductor