HN1C01FU-Y,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPN + NPN IND. TRANSISTOR VCEO50
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
Discount
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Upgrade your electronic designs with the HN1C01FU-Y,LF BJT Arrays by Toshiba Semiconductor and Storage, offering unmatched durability and precision. Key features include high gain, low noise, and thermal stability, ensuring optimal performance in demanding environments. Widely used in audio amplifiers, motor control systems, and power management circuits. Interested in bulk orders or custom solutions? Submit your inquiry now and our team will respond promptly!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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