HN2A01FE-Y(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A ES6
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Experience cutting-edge technology with the HN2A01FE-Y(TE85L,F Transistor Arrays by Toshiba Semiconductor and Storage, designed to meet the highest industry standards. Features include enhanced switching speed, low leakage current, and superior thermal management. Perfect for applications in aerospace, defense, and renewable energy systems. Have questions or need a customized solution? Contact us now and let s discuss how we can support your needs!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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