HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 120V 0.1A SM6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic systems with Toshiba Semiconductor and Storage's HN3A51F(TE85L,F) BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
Related Products
Nexperia USA Inc.
BCM857BS/ZLF
Central Semiconductor Corp
MD7003A
Diodes Incorporated
ZDT705TA
STMicroelectronics
E-ULQ2003D1
Diodes Incorporated
ZDT6718TA
Microchip Technology
SG2803J-DESC
Central Semiconductor Corp
2N3807
Diodes Incorporated
ZDT749TC
Fairchild Semiconductor
KSP42ATA
Panasonic Electronic Components