HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 120V 0.1A SM6
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Enhance your electronic systems with Toshiba Semiconductor and Storage's HN3C51F-GR(TE85L,F BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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