HN4C51J(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 120V 0.1A SMV
$0.46
Available to order
Reference Price (USD)
3,000+
$0.12994
6,000+
$0.12206
15,000+
$0.11419
30,000+
$0.10500
Exquisite packaging
Discount
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Optimize your designs with the HN4C51J(TE85L,F) Transistor Arrays by Toshiba Semiconductor and Storage, providing superior electrical characteristics and reliability. Features include low on-resistance, high current gain, and ESD protection, perfect for sensitive and high-power applications. Ideal for use in medical devices, power converters, and consumer gadgets. Let s collaborate send us your specifications and we ll deliver the perfect solution for your needs!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual) Common Base
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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