HP8K22TB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+NCH MID POWER MOSFET
$1.43
Available to order
Reference Price (USD)
2,500+
$0.47740
Exquisite packaging
Discount
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Discover high-performance HP8K22TB from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Rohm Semiconductor s HP8K22TB enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A, 57A
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
- Power - Max: 25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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