HUFA75329G3
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$90.66
Available to order
Reference Price (USD)
1+
$90.66000
500+
$89.7534
1000+
$88.8468
1500+
$87.9402
2000+
$87.0336
2500+
$86.127
Exquisite packaging
Discount
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Enhance your circuit performance with HUFA75329G3, a premium Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust HUFA75329G3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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