IAUA250N04S6N008AUMA1
Infineon Technologies
Infineon Technologies
OPTIMOS POWER MOSFET
$3.41
Available to order
Reference Price (USD)
1+
$3.41000
500+
$3.3759
1000+
$3.3418
1500+
$3.3077
2000+
$3.2736
2500+
$3.2395
Exquisite packaging
Discount
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IAUA250N04S6N008AUMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IAUA250N04S6N008AUMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 172W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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Infineon Technologies