IAUS200N08S5N023ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 200A HSOG-8
$5.79
Available to order
Reference Price (USD)
1+
$5.79000
500+
$5.7321
1000+
$5.6742
1500+
$5.6163
2000+
$5.5584
2500+
$5.5005
Exquisite packaging
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Experience the power of IAUS200N08S5N023ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IAUS200N08S5N023ATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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