IAUZ30N06S5L140ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 30A TSDSON-8-32
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
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Boost your electronic applications with IAUZ30N06S5L140ATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IAUZ30N06S5L140ATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN
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