Shopping cart

Subtotal: $0.00

IDB15E60ATMA1

Infineon Technologies
IDB15E60ATMA1 Preview
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263
$0.92
Available to order
Reference Price (USD)
1,000+
$1.04560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Last Time Buy
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 29.2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 87 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -40°C ~ 175°C

Related Products

Diodes Incorporated

S1B-13-F

Diodes Incorporated

SBR20M45D1Q-13

Vishay General Semiconductor - Diodes Division

VS-E4PH3006L-N3

Vishay General Semiconductor - Diodes Division

SS2H10-M3/5BT

Rohm Semiconductor

SCS215AEGC11

Diodes Incorporated

BAS116Q-7-F

Yangzhou Yangjie Electronic Technology Co.,Ltd

E2GF-F1-0000HF

Top