IGN1011L70
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$222.00
Available to order
Reference Price (USD)
1+
$222.00000
500+
$219.78
1000+
$217.56
1500+
$215.34
2000+
$213.12
2500+
$210.9
Exquisite packaging
Discount
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Meet Integra Technologies Inc.'s IGN1011L70, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 22dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 22 mA
- Power - Output: 80W
- Voltage - Rated: 120 V
- Package / Case: PL32A2
- Supplier Device Package: PL32A2
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