IGW25N120H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 50A 326W TO247-3
$6.08
Available to order
Reference Price (USD)
1+
$6.17000
10+
$5.58500
240+
$4.64683
720+
$4.01446
1,200+
$3.44749
Exquisite packaging
Discount
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Optimize power control with IGW25N120H3FKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IGW25N120H3FKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 326 W
- Switching Energy: 2.65mJ
- Input Type: Standard
- Gate Charge: 115 nC
- Td (on/off) @ 25°C: 27ns/277ns
- Test Condition: 600V, 25A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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