IGW75N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 120A TO247-3
$6.07
Available to order
Reference Price (USD)
1+
$5.86000
10+
$5.30600
240+
$4.41504
720+
$3.81419
1,200+
$3.27551
Exquisite packaging
Discount
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Maximize energy efficiency with IGW75N65H5XKSA1 Single IGBTs by Infineon Technologies, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose IGW75N65H5XKSA1 for your next project and experience the Infineon Technologies difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 2.25mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 28ns/174ns
- Test Condition: 400V, 75A, 8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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