IKD04N60RATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 600V 8A TO252-3
$0.65
Available to order
Reference Price (USD)
2,500+
$0.53185
Exquisite packaging
Discount
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Choose IKD04N60RATMA1 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IKD04N60RATMA1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 75 W
- Switching Energy: 90µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 27 nC
- Td (on/off) @ 25°C: 14ns/146ns
- Test Condition: 400V, 4A, 43Ohm, 15V
- Reverse Recovery Time (trr): 43 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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