IKFW50N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IKFW50N65EH5XKSA1
$7.14
Available to order
Reference Price (USD)
1+
$7.14000
500+
$7.0686
1000+
$6.9972
1500+
$6.9258
2000+
$6.8544
2500+
$6.783
Exquisite packaging
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Optimize power control with IKFW50N65EH5XKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IKFW50N65EH5XKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 59 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 124 W
- Switching Energy: 1.2mJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 20ns/138ns
- Test Condition: 400V, 40A, 15.1Ohm, 15V
- Reverse Recovery Time (trr): 52 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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