IKP40N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 74A 255W TO220-3
$4.18
Available to order
Reference Price (USD)
1+
$3.78000
10+
$3.39200
100+
$2.77890
500+
$2.36560
1,000+
$1.99508
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with IKP40N65H5XKSA1 Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 255 W
- Switching Energy: 390µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 22ns/165ns
- Test Condition: 400V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
Related Products
Rohm Semiconductor
RGT30NS65DGTL
onsemi
HGTP10N120BN
Microchip Technology
APT35GN120SG
Bourns Inc.
BIDNW30N60H3
IXYS
IXXA30N65C3HV
Fairchild Semiconductor
FGA50N100BNTTU
Infineon Technologies
AIKQ120N60CTXKSA1
onsemi
HGTG30N60A4D
Renesas Electronics America Inc
RJH60V2BDPP-M0#T2
Sanken