IKW25N120T2FKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 1200V 50A TO247-3
$6.87
Available to order
Reference Price (USD)
1+
$7.32000
10+
$6.66400
240+
$5.60642
720+
$4.94886
1,200+
$4.37706
Exquisite packaging
Discount
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Choose IKW25N120T2FKSA1 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IKW25N120T2FKSA1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
- Power - Max: 349 W
- Switching Energy: 2.9mJ
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 27ns/265ns
- Test Condition: 600V, 25A, 16.4Ohm, 15V
- Reverse Recovery Time (trr): 195 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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