IKW50N65WR5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
$4.98
Available to order
Reference Price (USD)
1+
$5.16000
10+
$4.63700
240+
$3.79892
720+
$3.23396
1,200+
$2.72744
Exquisite packaging
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Optimize power control with IKW50N65WR5XKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IKW50N65WR5XKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 282 W
- Switching Energy: 840µJ (on), 220µJ (off)
- Input Type: Standard
- Gate Charge: 230 nC
- Td (on/off) @ 25°C: 45ns/417ns
- Test Condition: 400V, 25A, 16Ohm, 15V
- Reverse Recovery Time (trr): 110 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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