IKW75N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
$7.52
Available to order
Reference Price (USD)
1+
$7.71000
10+
$7.02000
240+
$5.90542
720+
$5.21278
1,200+
$4.61048
Exquisite packaging
Discount
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The IKW75N65ES5XKSA1 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 2.4mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 164 nC
- Td (on/off) @ 25°C: 40ns/144ns
- Test Condition: 400V, 75A, 18Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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